Mr. Ulrich Strößner Profile

Ulrich Strößner

at Carl Zeiss SMT GmbH

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Author

Publications (12)

Proceedings Article | 14 October 2011 Paper

Development status and infrastructure progress update of aerial imaging measurements on EUV masks

Sascha Perlitz, Wolfgang Harnisch, Ulrich Strößner, Jan Hendrik Peters, Markus Weiss, Dirk Hellweg

Proceedings Volume 8166, 816610 (2011) https://doi.org/10.1117/12.899038

KEYWORDS: Extreme ultraviolet, Photomasks, Manufacturing, Plasma, Extreme ultraviolet lithography, Airborne remote sensing, Light sources, Metrology, EUV optics, Electron beam lithography

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Proceedings Article | 5 April 2011 Paper

AIMS EUV: the actinic aerial image review platform for EUV masks

Dirk Hellweg, Johannes Ruoff, Alois Herkommer, Joachim Stühler, Thomas Ihl, Heiko Feldmann, Michael Ringel, Ulrich Strößner, Sascha Perlitz, Wolfgang Harnisch

Proceedings Volume 7969, 79690H (2011) https://doi.org/10.1117/12.879422

KEYWORDS: Extreme ultraviolet, Scanners, Extreme ultraviolet lithography, Photomasks, EUV optics, Reticles, Projection systems, Optics manufacturing, Charge-coupled devices, Artificial intelligence

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Proceedings Article | 2 April 2011 Paper

Concept and feasibility of aerial imaging measurements on EUV masks

Sascha Perlitz, Wolfgang Harnisch, Ulrich Strößner, Heiko Feldmann, Dirk Hellweg, Michael Ringel

Proceedings Volume 7985, 79850U (2011) https://doi.org/10.1117/12.895208

KEYWORDS: Extreme ultraviolet, Photomasks, Scanners, Extreme ultraviolet lithography, Reticles, Particles, Lithography, Metrology, Airborne remote sensing, Electromagnetic coupling

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Proceedings Article | 23 September 2009 Paper

AIMS mask qualification for 32nm node

Rigo Richter, Thomas Thaler, Holger Seitz, Ulrich Stroessner, Thomas Scheruebl

Proceedings Volume 7488, 74882R (2009) https://doi.org/10.1117/12.830083

KEYWORDS: Photomasks, Double patterning technology, Scanners, Source mask optimization, Lithography, Computational lithography, Lithographic illumination, Semiconducting wafers, 193nm lithography, Optical aberrations

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Proceedings Article | 17 October 2008 Paper

AIMS and resist simulation

Ulrich Strößner, Holger Seitz, Robert Birkner, Rigo Richter, Thomas Scherübl

Proceedings Volume 7122, 71221D (2008) https://doi.org/10.1117/12.801226

KEYWORDS: Semiconducting wafers, Photomasks, Calibration, Image processing, Scanners, Printing, Photoresist processing, Lithography, Data modeling, Physics

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Proceedings Article | 19 May 2008 Paper

Wafer level CD metrology on photomasks using aerial imaging technology

Thomas Scherübl, Ulrich Strößner, Holger Seitz, Robert Birkner, Rigo Richter

Proceedings Volume 7028, 70282W (2008) https://doi.org/10.1117/12.793102

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Airborne remote sensing, Scanning electron microscopy, Line width roughness, Line edge roughness, Scanners, Optical proximity correction, Lithography

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Proceedings Article | 19 May 2008 Paper

Increasing the predictability of AIMS measurements by coupling to resist simulations

Balint Meliorisz, Andreas Erdmann, Thomas Schnattinger, Ulrich Ströβner, Thomas Scherübl, Peter De Bisschop, Vicky Philipsen

Proceedings Volume 7028, 70282S (2008) https://doi.org/10.1117/12.793098

KEYWORDS: Semiconducting wafers, Photoresist materials, Data modeling, Photomasks, Scanners, Diffusion, Lithography, Photoresist processing, Calibration, Photoresist developing

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Proceedings Article | 3 May 2007 Paper

Programmed defects study on masks for 45nm immersion lithography using the novel AIMS 45-193i

Thomas Scherübl, Arndt Dürr, Klaus Böhm, Robert Birkner, Rigo Richter, Ulrich Strößner

Proceedings Volume 6533, 653309 (2007) https://doi.org/10.1117/12.736530

KEYWORDS: Photomasks, Scanners, Immersion lithography, Lithographic illumination, Opacity, Defect detection, Lithography, CCD cameras, Semiconducting wafers, Manufacturing

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Proceedings Article | 27 March 2007 Paper

Pupil plane analysis on AIMS 45-193i for advanced photomasks

Yasutaka Morikawa, Takanori Sutou, Kei Mesuda, Takaharu Nagai, Yuichi Inazuki, Takashi Adachi, Nobuhito Toyama, Hiroshi Mohri, Naoya Hayashi, Ulrich Stroessner, Robert Birkner, Rigo Richter, Thomas Scheruebl

Proceedings Volume 6520, 65201H (2007) https://doi.org/10.1117/12.711664

KEYWORDS: Photomasks, Pellicles, Diffraction, Semiconducting wafers, Printing, Wafer-level optics, 3D metrology, Polarization, Data modeling, Binary data

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Hyper-NA lithography with polarized light illumination is introduced as the solution of 45nm or 32nm node technology. In that case, consideration of new characteristics of mask materials and pellicle films has been required. In order to analyze the influence of mask material's optical characteristics, we have proposed to use the AIMS^TM system measuring diffraction intensity balance in previous work. That was enabled by acquiring pupil plane images using the Bertrand lens in the AIMS^TM system to measure selected area's diffracted light. In this study of mask material evaluation, we used same functionality of AIMS^TM system, MonoPole illumination and Bertrand lens, as previous work but other direction's pole is also used on the illumination aperture to cover total diffraction orders of Cross-quad illumination because this illumination is more flexible for x and y patterns. In order to get diffracted light of 45nm half-pitch, hyper-NA e.g. NA=1.35 was applied and the AIMS^TM 45-193i Alpha system was used for this evaluation. The examinations were performed with binary and half tone PSM with half pitch 40 to 150nm on a 1x scale and fixed half pitch 45nm with various mask bias. We confirmed the relation between diffractions' intensity balance and wafer printing performance for each material and we compared them to 3D simulation results. Moreover, by using the same functionality of AIMS^TM system, the transmission change by pellicle film was also examined. We have prepared two different thickness pellicles to compare transmission change and printed CD on the wafer. Intensity profile at pupil plane on the clear region of the mask was acquired with Bertrand lens and conventional large sigma setting for both with and without pellicle film on the mask. By comparing transmission distribution change between with and without pellicle, we could calculate transmission loss by pellicle at large incident angles. For this experiment, NA=1.40 was applied and the AIMS^TM 45-193i Alpha system was also used. The examinations were performed with half tone PSM at half pitch 45nm and 65nm on a 1x scale on linear polarized DiPole illumination. As a result, we have confirmed good agreement between AIMS^TM measurement data and optical 3D simulations. In conclusion, the AIMS^TMsystem is a valuable tool for analyzing diffraction efficiency or intensity distribution on the pupil plane and comparison to wafer printing performance.

Proceedings Article | 21 June 2006 Paper

Printability study with polarization based AIMS fab 193i to investigate mask polarization effects

Axel Zibold, Ulrich Stroessner, Eric Poortinga, Rainer Schmid, Thomas Scherübl, Norbert Rosenkranz, Wolfgang Harnisch

Proceedings Volume 6281, 628108 (2006) https://doi.org/10.1117/12.692728

KEYWORDS: Polarization, Photomasks, Scanners, Reticles, Semiconducting wafers, Transmittance, Phase shifts, Printing, Immersion lithography, Semiconductors

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Proceedings Article | 20 May 2006 Paper

First results for hyper NA scanner emulation from AIMS 45-193i

Axel Zibold, Ulrich Strössner, Norbert Rosenkranz, Andrew Ridley, Rigo Richter, Wolfgang Harnisch, Alvina Williams

Proceedings Volume 6283, 628312 (2006) https://doi.org/10.1117/12.681863

KEYWORDS: Scanners, Polarization, Photomasks, Semiconducting wafers, Reticles, Binary data, Immersion lithography, Printing, Optical testing, Lithography

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Proceedings Article | 24 March 2006 Paper

Printability study with polarisation capable AIMS™ fab 193i to study polarisation effects

Axel Zibold, Ulrich Stroessner, Andrew Ridley, Thomas Scherübl, Norbert Rosenkranz, Wolfgang Harnisch, Eric Poortinga, Rainer Schmid, Joost Bekaert, Vicky Philipsen, Lieve Van Look, Peter Leunissen

Proceedings Volume 6152, 61522F (2006) https://doi.org/10.1117/12.656235

KEYWORDS: Polarization, Photomasks, Scanners, Reticles, Semiconducting wafers, Printing, Critical dimension metrology, Transmittance, Binary data, Polarizers

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Showing 5 of 12 publications

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