Dr. Volodymyr Ivanovych Ivashchenko Profile

Dr. Volodymyr Ivanovych Ivashchenko

at Institute for Problems of Materials Science

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Proceedings Article | 10 September 2008 Paper

Blue photoluminescence of PECVD SiC-based films

V. Ivashchenko, A. Vasin, L. Ivashchenko, M. Ushakov

Proceedings Volume 7041, 70410X (2008) https://doi.org/10.1117/12.793676

KEYWORDS: Silicon carbide, Silicon, Annealing, Nanostructures, Chemical species, Absorption, Plasma enhanced chemical vapor deposition, Temperature metrology, Oxygen, Crystals

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Amorphous and nanocrystalline SiC films enriched by oxygen were deposited by a PECVD technique using methyltrichlorosilane as a gas-precursor at substrate temperature in the range of 200-350 °C. X-ray diffraction (XRD) of the film deposited at 350°C exhibited the presence of SiC nano-crystallites. In this film the bright blue photoluminescence (PL) with spectrum that has a double-peak structure at 415 and 437 nm was obsearved at room temperature. The film was annealed at 650 and 850 °C in vacuum. Annealing at 650 °C strongly enhanced blue-white photoemission with maximum intensity around 470 cm^-1. Moderate annealing was found to lead to strengthening the C-H, C-C and Si-C bonds as well as to increasing of a size of SiC grains embedded in the amorphous Si:C:O:H matrix. A further increase of annealing temperature up to 850 °C caused a drop of PL. Basing on an analysis of experimental data and first principles simulations of several hydrogenated SiC and Si nanoclusters, we suggest that the blue PL in as-deposited nc-SiC:H film and related Si-based nanostructures can be assigned to the radiative recombination in a radiative center (RC) located at the nanocrystallite surface, whereas the excitation of electron-hole pares occurs in nanocrystallite cores. It follows from our calculations that O-O structural groups can be considered as a radiative recombination centers. The recombination at band tails of the amorphous Si:C:O:H tissue (or at the oxygen-related defect states in a-SiO_x, in the case of Si nanostructures) gives rise to a shoulder around 470 nm.

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