Current injection through tunnel junctions (TJs) can enhance the external quantum efficiency of nanowire (NW) and multi-quantum-shell-based optical devices, compared. However, control of the impurity concentration profile is difficult in such tiny structure. In this study, we show a simple evaluation method of impurities in TJs growing flatly on m-plane GaN substrates, which have the same crystalline orientation as the luminescent surface of MQS/NWs. It was found to decrease the differential resistance by increase the concentration of Mg in p^(++)-GaN in the TJ.
GaInN/GaN multi-quantum shells nanowires (NWs) are coaxially grown in non-polar m-plane or semi-polar r-plane surface, which is expected to improve the luminous efficiency. The emission wavelengths usually redshift from the sidewall to top c-plane region. However, the emission from c-plane has low luminous efficiency. In this research, the c-plane area of NWs in one sample was removed by dry etching prior to the fabrication process, while the other one without c-plane etching was prepared to investigate the effect of c-plane region on the luminescence intensity. The sample with etching shows 12 times higher output power than the sample without etching.
A nitride-based light-emitting structure composed of a GaN nanowire core and GaInN/GaN multi-quantum shells (MQSs) is promising for high performance optoelectronic devices. By growing high crystalline quality MQS on the nonpolar (m-plane) sidewall of the nanowires, an improvement of luminous efficiency is expected. For Mg activation in p-GaN under the tunnel junction is a big challenge, in this work, we carried out the sputtering growth of n-GaN capping layer on the tunnel junction/p-GaN/MQS/nanowire structures for the first time. Single crystalline n-GaN was successfully grown mainly on the tip of the nanostructures.
GaInN/GaN multiple quantum shells (MQS) nanowires and p-GaN shells were embedded with n-GaN layers through tunnel junction (TJ) shells using metalorganic chemical vapor deposition (MOCVD) method. The MQS nanowires were selectively grown on n-GaN/sapphire or GaN substrates. The fabrication process of laser structures with different resonators of 600500, 750, 1000 μm, and cavity widths of 7, 12, and 17 μm were investigated with insulating layer on the sidewalls of the ridge. The structures of the fabricated devices were characterized by scanning electron microscope (SEM) and current-voltage-light output characteristics were evaluated. Two different methods for mirror formation, etching and cleavage, were developed for the laser devices. During the investigation, a superior mirror formation suffered from the difference in etching rate between GaInN and GaN, generating concaves in the MQS region. Bluegreen light emission was observed from the entire ridge surface of the MQS index-guided laser structures. A maximum current density of emission at 17.9 kA/cm2 has been confirmed in the devices. The electroluminescence and cathodoluminescence measurements demonstrated that the r-plane and c-plane at the top of the MQS are dominant at low current densities, and the m-plane emission becomes stronger as the current density increases.
A tunnel junction and a n-GaN cap layer grown on the multi-quantum shells (MQS) /nanowires are introduced to decrease the resistivity and optical loss. The selective-area growth of the MQS/nanowire core-shell structures on the template was performed by metalorganic vapour phase epitaxy (MOVPE). Further, the MQS structure was covered with the tunnel junction and the n-GaN cap layer. Here, the growth conditions of the n-GaN cap layer were systemically investigated. The effect of p-GaN shape on the morphology of grown n-GaN cap layer was also assessed.
The selective-monolithic growth of coaxial GaInN/GaN NWs was investigated by changing the TEG flow rate, barrier and well growth temperature during MQS growth. In incorporation increased with a higher TEG flow rate. However, In-rich flakes were formed the NWs resulting in the deterioration of crystal quality. Using a higher growth temperature of quantum barriers, abnormal growth at the top of NWs was eliminated. As a result, the CL emission intensity was enhanced. Furthermore, the occurrence of In desorption was suppressed by decreasing the growth temperature of quantum wells. Therefore, these results are promising for NW-based white LEDs.
As a potential material for white light source, high luminous efficiency of fluorescent SiC requires a concentration of higher than 1.0×1019 cm-3 for both the donor (Nd) and acceptor (Na) and a film thickness of about 120 μm. In this study, we focus on the epitaxial growth of fluorescent 4H-SiC by closed sublimation growth in terms of different growth temperatures to increase the doping concentration of boron and nitrogen. In addition, the effect of growth pressure on the surface morphology was investigated. The photoluminescence (PL) intensity of the sample grown at 1900 °C is higher than that grown at 1800 °C. This result indicates that a higher temperature of 1900 °C can increase the boron (B) and nitrogen (N) doping concentration. However, it was confirmed that the surface of the sample grown at 1900 °C was rough. The surface morphology was significantly improved with an increased pressure to 9000 Pa. Meanwhile, the growth time was extended to increase the film thickness, and the amount of BN, which is the doping source of B acceptor, was increased accordingly. As a result, strong PL emission intensity with high internal quantum efficiency (IQE) was successfully demonstrated in 4H-SiC sample, which is comparable to that in fluorescent 6H-SiC.
We report on the fabrication, structure and characteristic of porous fluorescent SiC using voltage-controlled anodic oxidation method. In this experiment, the fluorescent SiC substrates were immersed in hydrofluoric acid for anodic oxidation etching. The porous structures changed significantly as the voltage increased to 10 V, 20 V and 30 V. Under a high voltage, it is considered that a large amount of electrons were injected into the fluorescent SiC and increased the anodic reaction rate. In the photoluminescence (PL) spectra, a emission peak in the short wavelength region was observed. And these emission intensities increase as the voltage increase.
The three-dimensional core-shell structure consisting of GaN nanowire and GaInN/GaN multi-quantum shell (MQS) is thought to be promising for high-performance light-emitting devices, because of its advantages such as non-polar surface orientation, dislocation-free and tolerance of misfit strain due to small size crystal. However, their crystal growth mechanism and its crystalline quality have not yet fully understood, and they are still under the basic considerations.
The key issues in the nanowire/MQS structure are its crystalline quality and shape control, which are greatly dependent on the growth condition. Thus, in this paper, selective growth of nanowire/MQS and its optical properties are described.
Donor-acceptor-codoped SiC was recognized as a candidate of blue LED material in 1970s-1980s. However, very few works on optical device applications of SiC are recently conducting, because many scientists and researchers believe that the indirect bandgap material including SiC is not suitable for optical use. In 2006, a concept of fluorescent SiC (f-SiC), which is a thick 6H-SiC epilayer and contains donor and acceptor impurities, was proposed. The f-SiC works as a phosphor and it is not an electrically excited material like LEDs. And a monolithic white LED, composed of the f-SiC substrate and over-grown nitride-based near UV LED stack was demonstrated.
A combination of the f-SiC and porous SiC, which is made from the f-SiC by anodic oxidation was reported to show pure white light emission with a color rendering index of 81. Advantages of f-SiC based phosphor might be its chemical stability and the superior temperature characteristics, compared with current powder phosphors used in white LEDs. Thus, in this talk, optical properties of f-SiC and porous f-SiC, and performance of the white LED in combination with the f-SiC substrate and a nitride-based near UV LED are given.
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