As part of the continuing reduction of half-pitch line widths, the International Technology Roadmap for Semiconductors
(ITRS) forecasts an increasing number of issues with electrostatic discharge (ESD) related phenomena
and the need for improved electrostatic charge control in semiconductor wafer processing. This means that wafer
metrology should encompass charge measurements as a routine operation. Additionally, with the increasing complexity
of wafer processing, in-line measurements including surface voltage and charge detection and analysis are
becoming more important. One of the instruments utilized in such measurements is a non-contacting electrostatic
voltmeter (ESVM). In this paper the authors would like to introduce a new design for the ESVM probe which
allows for the measurement of surface voltages with DC stability and millivolt sensitivity. The construction of
the probe utilizes a gold plated sensor that is mounted on a vibrating tuning fork which is electromechanically
excited by a piezoelectric driver.
In this paper authors examine the design and implementation of a
cantilever beam-style probe for non-contacting electrostatic
voltmeter. The beam is driven by a piezoelectric actuator with a
feedback loop controlling amplitude of the electrostatic sensor
displacement. Choice of the vibration mode and placement of the
actuator and sensor are discussed. A simple model for the first
three natural frequencies of the beam is constructed and compared
with the experimental results.
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