Laser-induced periodic surface structure (LIPSS) is a universal phenomenon which occurs for both continuous laser and pulsed laser. Recently, most studies are focus on LIPSS irradiated by fs laser. However, LIPSS irradiated by continuous laser still need to be carefully studied. Here, We study LIPSS in silicon wafer irradiated by continuous laser for different duration time and power. For the same power, we can observe the evolution process of LIPSS for different time. It is surprising that the evolution process of LIPSS seems to be layered, which occurs for different power. The inner layer occurs at first, then the outer layer occurs. Our study can be used to control the formation of LIPSS.
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