Spectral beam combining technique is one of major approaches in power scaling of fiber lasers. In order to maximize beam-combining performance, maintain a high beam quality in the combining process, the absorption-induced wavefront distortion of the resulting combined beam must be considered. By reducing the film absorption, the dichroic filters will be promising competitors to dielectric gratings as crucial spectral beam combining elements. In this paper, two different structures: less-cavities (LC) structure and more-cavities (MC) structure of dichroic filter layers were carefully designed and fabricated by ion-beam sputtering deposition with high-precision layer thickness monitoring method. A photothermal scanning system based on laser-induced surface thermal lensing (STL) effect was used for analyzing the 1064nm wavelength absorption of dichroic filter layers in passband and stopband. Dichroic filter with reduced in-bandpass absorption was found in MC structure by relaxing the electric field strength in thin films. This approach is highly expected to have great potential for fabricating promising spectral beam combining dichroic filters with less thermal effect and higher laser-induced damage threshold (LIDT).
Ta2O5/SiO2 mixed film is a very promising material for the preparation of new optical and optoelectronic devices, but there are few reports on its etching characteristics. In this paper, Ta2O5/SiO2 mixed films with various proportions of Ta2O5 were prepared by ion-beam sputtering deposition. CHF3-based reactive ion etching (RIE) was used to etch Ta2O5/SiO2 mixed films. The etching profiles of Ta2O5/SiO2 mixed films were observed by using a field-emission scanning electron microscope (SEM). The RIE etch rates were investigated as a function of the Ta2O5/SiO2 mixture ratio, RIE power, chamber pressure and etching gas ratio. It is found that the etch rate of Ta2O5/SiO2 mixed films increase with an increase of RIE power and chamber pressure, and decrease with an increase of Ta2O5 composition in the Ta2O5/SiO2 mixed films. Moreover, it is also found that as the proportion of F-based gas increases, the etching rate of the Ta2O5/SiO2 mixed film first increases and then saturates. These results would be of importance for the fabrication of optical and optoelectronic devices based on Ta2O5/SiO2 mixed films.
In this paper, we designed the broadband all-dielectric reflection phase shifting mirror to convert the linear polarization incident light to circularly polarization reflected light in the design wavelength range (750nm~850nm) for ultra-high intensity laser application. The 48 multilayer coated mirror used Ta2O5 and SiO2 as high and low refractive index materials. The theoretical design results indicated that at the incident angle 45 degree, the reflectivity of s- polarization light exceeded 99.9% and p- polarization light exceeded 99.5%, and phase shift values between s- and p- polarization lights were -90±5 degrees in the design wavelength range. The all-dielectric broadband reflection phase shifting mirror was fabricated with an ion beam sputtering system. The measurement results indicated that the reflectivity of s-polarization light exceeded 99.9% and p- polarization light exceeded 99.3%, and phase shift values between s- and p-polarization lights were -95~-77 degrees. The reflectivity of s- polarization light and p- polarization light conform well to theoretical design values. However, the phase shift values slightly deviated from theoretical design results in part of the wavelength range. With features of high reflectivity and invertible linear to circular polarization conversion, the all-dielectric broadband reflection phase shifting mirror can be a good replacement for quarter wave plate in high intensity laser region, and offers a further step in developing polarization and phase manipulation devices.
As an excellent optical element material, CaF2 crystal has a wide-spectrum transmission range and stable physicochemical properties. Due to the soft and brittle nature of CaF2 crystal, also with high coefficient of thermal expansion and low heat conductivity coefficient, it is of great significance to study the stability and characterization of the removal function during the processing of large-diameter CaF2 optical elements with specific geometric requirements. In this paper, a Φ200 mm CaF2 crystal plate was taken as the research object. The stable technique of grinding and polishing calcium fluoride is researched and the pressure is treated as the key factor. The specialized tool is designed to control the pressure. The removal model of grinding and polishing is stablished based on the specialized tool. The pressure distribution of grinding and polishing process is simulated and the optimized pressure distribution is obtained. This makes the whole face error converged efficiently and stably, meanwhile the face to face angle can be controlled precisely. As a conclusion, the PV value of experimental element is less than 0.13λ within the aperture, and the face to face angle is restrained into 5″ after using new tools.
Aiming at the problem that the damage threshold of gold coated grating is relatively low, a dielectric film is considered on the gold coated gratings as a protective layer. The thickness range of the protective layer is determined under the prerequisite that the diffraction efficiency of the gold coated grating is reduced to an acceptable degree. In this paper, the electromagnetic field, the temperature field and the stress field distribution in the grating are calculated when the silica and hafnium oxide are used as protective layers, under the preconditions of the electromagnetic field distribution of the gratings known. The results show that the addition of the protective layer changes the distribution of the electromagnetic field, temperature field and stress field in the grating, and the protective layer with an appropriate thickness can improve the laser damage resistance of the grating.
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