In this paper, we report on the near-field distribution of multi-core photonic crystal fiber lasers. The supermodes of
photonic crystal fibers with foursquarely and circularly distributed multi-cores are observed. The supermode properties
are investigated by using full-vector finite-element method (FEM). The mode operations of our 16-core foursquare-array
and 18-core circular-array photonic crystal fiber lasers are simulated by the COMSOL Multiphysics software. The
near-field distribution patterns of in-phase supermode are presented.
Terahertz ray, as a new style optic source, usually means the electromagnetic whose frequencies lies
in between 0.1THz~10THz, the waveband region of the electromagnetic spectrum lies in the gap between microwaves and
infrared ray. With the development of laser techniques, quantum trap techniques and compound semiconductor techniques,
many new terahertz techniques have been pioneered, motivated in part by the vast range of possible applications for
terahertz imaging, sensing, and spectroscopy. THz imaging technique was introduced, and THz imaging can give us not
only the density picture but also the phase information within frequency domain. Consequently, images of suspicious
objects such as concealed metallic or metal weapons are much sharper and more readily identified when imaged with
THz imaging scanners. On the base of these, the application of THz imaging in nondestructive examination, more
concretely in large scale circuit failure inspection was illuminated, and the important techniques of this application were
introduced, also future prospects were discussed. With the development of correlative technology of THz, we can draw a
conclusion that THz imaging technology will have nice application foreground.
A design of light modulator for THz amplitude and phase modulations has been presented in this paper.
Simplest versus of the Drude model is adopted, in which the collision damping is independent of the carrier
energy. In our experiment, we use THz-TDS as THz source and detector. A laser whose wavelength is
808nm was used to irradiate the intrinsic Si(high-resistance), so as to let it generate the Photo-carriers ,and
to influence the conductance . The Photo-carriers will change the absorption coefficient of the THz wave
and also influence the dielectric of the sample, hence to control the characteristics of the THz wave in the
silicon . By changing the light intensity , due to the different photon-generated carrier concentration ,the
single transmission of the THz wave in the silicon wafer sample is changing remarkable . Theoretically,
the modulation depth can be more than 80%. we present our design of light modulator for THz, and show
the Digital simulation of our design. Also, according to this design theory, Optical/electronic integrated
modulation of THz can be realized, that will be our future work.
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