paper we design a vertical waveguide grating coupler based on sub-wavelength grating with highly integration, high coupling efficiency and large bandwidth. A grating always shows multiple diffraction orders with different efficiency, but only a certain diffraction order with high efficiency is very effective for light coupling. The silicon-based waveguide grating is designed and simulated in this paper, which is modelled by using the Finite-difference time-domain (FDTD) method. The coupling efficiency is analyzed and optimized with the structure parameters of the grating period, duty cycle and etching depth et al. The results show that more than 30% of the coupling efficiency is obtained during the optical communication C-band (1530nm-1565nm) and remained more than 50% in the range of 1545nm-1555nm. The parameter tolerance is relatively high with more than 40nm in grating period, more than 100nm in grating etching depth and more than 140nm in grating duty cycle. Such an optical waveguide grating coupler is expected to be used for input and output of optical signal coupling in the field of silicon photonic integrated devices.
We propose a 1×3 mode multiplexed optical waveguide switch based on phase change material of Ge2Sb2Se4Te1 (GSST). The big refractive index difference between the two state of the phase change material, which is used to realize the mode matching and mode mismatch between two waveguides. For the 1×3 multiplexer waveguide switch transmission, TE0 mode is set as the input and the modes of TE0 TE1 TE2 will be the output. The characteristics of the switch transmission are calculated and analyzed based on the mode dispersion and mode coupling theory, thus, the structure size and coupling length of the optical waveguide switches are determined. The optical switching device is modeled and simulated by the three-dimensional finite difference time domain (3D-FDTD) method. We mainly discussed insertion loss (IL) and extinction ratio (ER) for evaluating the performance of the device. Three output ports of O1 / TE0, O2 / TE1 and O3 / TE2 show low ILs and high ERs, which separately are 1.19dB, 0.148dB and 0.71dB for ILs, and 16.19dB, 17.2dB and 16.19dB for ERs. The work wavelength is set at C-band with center wavelength of 1550nm.
On-chip filters are widely used in integrated optical systems and are indispensable for expanding the communication capacity. A silicon waveguide filter is fabricated into a subwavelength Bragg grating structure using the optical phase-change material Ge2Sb2Se4Te1 (GSST). Three-dimensional finite-difference time-domain method simulations showed that this structure performed multichannel filtering in the communications C-band (1530 to 1565 nm), demonstrating a minimum insertion loss of 0.238 dB and a full width at half-maximum of 3.4 nm with an incident TE0 mode. The number and width of channels can be adjusted using structural parameters. Furthermore, the overlapping frequencies of passbands and stopbands are obtained by the phase transition of GSST. This structure could potentially find use as an optical signal modulation device in on-chip integrated systems.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.