Novel laser trimming technique for microelectronics

Michel Meunier; Yves Gagnon; Yvon Savaria; Alain Lacourse; Maxime Cadotte

doi:10.1117/12.432531

29 June 2001 Novel laser trimming technique for microelectronics

Michel Meunier, Yves Gagnon, Yvon Savaria, Alain Lacourse, Maxime Cadotte

Proceedings Volume 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI; (2001) https://doi.org/10.1117/12.432531
Event: Photonics West 2001 - LASE, 2001, San Jose, CA, United States

Abstract

A novel laser trimming technique, fully compatible with conventional CMOS processes, is described for analogue and mixed microelectronics applications. In this method, a laser beam is used to create a resistive device by melting a silicon area, thereby forming an electrical link between two adjacent p-n junction diodes. These laser diffusible resistances can be made in less than a second with an automated system and their values can be in the range of 100 ohms to a few M ohms, with an accuracy of 50 ppm, by using an iterative process. In addition, these resistances can also be made to possess a thermal coefficient close to zero. We present the method used to create these resistances, the main device characterization and some insight on the process modeling.

Citation Download Citation

Michel Meunier, Yves Gagnon, Yvon Savaria, Alain Lacourse, and Maxime Cadotte "Novel laser trimming technique for microelectronics", Proc. SPIE 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI, (29 June 2001); https://doi.org/10.1117/12.432531

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