Modeling electrical characteristics of laser tuned silicon microdevices

Michel Meunier; Mathieu Ducharme; Jean-Sebastien Bernier

doi:10.1117/12.479412

17 October 2003 Modeling electrical characteristics of laser tuned silicon microdevices

Michel Meunier, Mathieu Ducharme, Jean-Sebastien Bernier

Proceedings Volume 4977, Photon Processing in Microelectronics and Photonics II; (2003) https://doi.org/10.1117/12.479412
Event: High-Power Lasers and Applications, 2003, San Jose, CA, United States

Abstract

Highly accurate resistances can be made by iteratively laser inducing local diffusion of dopants from the drain and source of a gateless field effect transistor into its channel, thereby forming an electrical link between two adjacent p-n junction diodes. These laser tuned microdevices have been electrically characterized and their current-voltage (I-V) behaviors are linear at low voltages and sublinear at higher voltages where carrier mobility is affected by the presence of high fields. Considering that the microdevice is a one dimensional trap less n+ υ n+ structure, we have developed a theoretical current-voltage equation that satisfies these experimental results.

Citation Download Citation

Michel Meunier, Mathieu Ducharme, and Jean-Sebastien Bernier "Modeling electrical characteristics of laser tuned silicon microdevices", Proc. SPIE 4977, Photon Processing in Microelectronics and Photonics II, (17 October 2003); https://doi.org/10.1117/12.479412

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