Although the polarization doping is a break-through technology for deep UV emitters, it is also very useful for enhancing p-type conductivity and lower the resistance in the classical InGaN laser diodes operating in the visible part of the spectrum. We were able, additionally, to show that these devices can operate in broader temperature range, especially at low (cryogenic) temperatures. We also show the drastic reduction in hydrogen content in top layers of the laser diodes, which may influence their reliability.
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