Growth of relaxed AlGaN layers on native GaN

Ronny Kirste; Seiji Mita; Jordan Almeter; Ramon Collazo; Zlatko Sitar

doi:10.1117/12.2606422

5 March 2022 Growth of relaxed AlGaN layers on native GaN

Ronny Kirste, Seiji Mita, Jordan Almeter, Ramon Collazo, Zlatko Sitar

Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC1200106 (2022) https://doi.org/10.1117/12.2606422
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

We demonstrate that MOCVD growth of AlGaN on GaN via facet controlled epitaxial lateral overgrowth (FACELO) allows for the growth of thick, relaxed, doped, c-oriented layers. The process includes patterning of the substrate, growth of GaN with pyramidal planes, and epitaxy of AlGaN. We show that AlGaN films with 30% Al-content and several microns of thickness can be grown. The fully coalesced films have a clean, crack free surface with an AFM RMS of 1 nm in a 10x10 μm2 area. Dislocation density is investigated via XRD and etch-pit-density and a dislocation density ranging 106 – 108 cm-2 is measured.

Conference Presentation

Citation Download Citation

Ronny Kirste, Seiji Mita, Jordan Almeter, Ramon Collazo, and Zlatko Sitar "Growth of relaxed AlGaN layers on native GaN", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC1200106 (5 March 2022); https://doi.org/10.1117/12.2606422

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