Porous GaN cladding in edge emitting laser diodes

Ryan Anderson

doi:10.1117/12.2610452

5 March 2022 Porous GaN cladding in edge emitting laser diodes

Ryan Anderson

Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010K (2022) https://doi.org/10.1117/12.2610452
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

GaN based edge emitting laser diodes typically use AlGaN or InGaN for mode confinement in waveguide cladding layers. Defect formation, high voltage, and lifetime issues limit the possible thickness and composition. Nano-porous GaN is a lattice matched, high index contrast material under investigation to replace AlGaN or InGaN for optical confinement. This opens up new designs to improve power and efficiency in GaN laser diodes. Electrically injected lasers have been fabricated using nano-porous GaN cladding, leading to a reduction in threshold current density at a cost to efficiency. Methods to reduce excess loss and improve heat dissipation will be discussed.

Conference Presentation

Citation Download Citation

Ryan Anderson "Porous GaN cladding in edge emitting laser diodes", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010K (5 March 2022); https://doi.org/10.1117/12.2610452

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