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20 March 2023 Theory of lateral field electro-absorption modulation in quantum dot heterostructures
Tommy Murphy, Christopher A. Broderick, Eoin P. O'Reilly, Frank H. Peters
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Proceedings Volume PC12415, Physics and Simulation of Optoelectronic Devices XXXI; PC1241505 (2023) https://doi.org/10.1117/12.2648228
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Electro-absorption modulators operate based on the quantum-confined Stark effect (QCSE). In quantum well and existing quantum dot (QD) structures, the use of top and bottom contacts allows application of an electric field along the growth direction. In this work, we theoretically analyse the QCSE in QD structures, investigating whether a lateral field orientation provides an appreciable QCSE sufficient to implement lateral QD-EAMs suitable for integration in photonic integrated circuits. We focus on InAs/GaAs QD structures close to 1300 nm, showing how the dot dimensions and built-in piezoelectric potential impact the calculated absorption spectrum as a function of applied lateral field.
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Tommy Murphy, Christopher A. Broderick, Eoin P. O'Reilly, and Frank H. Peters "Theory of lateral field electro-absorption modulation in quantum dot heterostructures", Proc. SPIE PC12415, Physics and Simulation of Optoelectronic Devices XXXI, PC1241505 (20 March 2023); https://doi.org/10.1117/12.2648228
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KEYWORDS
Quantum dots
Heterojunctions
Modulation
Quantum wells
Absorption
Electrons
Modulators
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