Fabrication of vertical UV light-emitting devices by separation of sapphire substrates (Conference Presentation)

Motoaki Iwaya; Toma Nishibayashi; Moe Shimokawa; Ryota Hasegawa; Eri Matsubara; Ryoya Yamada; Yoshinori Imoto; Ryosuke Kondo; Ayumu Yabutani; Sho Iwayama; Tetsuya Takeuchi; Satoshi Kamiyama; Hideto Miyake; Kohei Miyoshi; Koichi Naniwae; Akihiro Yamaguchi

doi:10.1117/12.2646756

17 March 2023 Fabrication of vertical UV light-emitting devices by separation of sapphire substrates (Conference Presentation)

Motoaki Iwaya, Toma Nishibayashi, Moe Shimokawa, Ryota Hasegawa, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Ryosuke Kondo, Ayumu Yabutani, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Kohei Miyoshi, Koichi Naniwae, Akihiro Yamaguchi

Author Affiliations +

Proceedings Volume PC12441, Light-Emitting Devices, Materials, and Applications XXVII; PC124410A (2023) https://doi.org/10.1117/12.2646756
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

In recent years, reports on highly efficient UV LEDs and UV laser diodes have been published one after another. Considering the application field of UV semiconductor light-emitting devices, it is essential to achieve high output, i.e., high current density operation, and it is important to establish a fabrication process for vertical devices to realize this. A 1cm square wafer with deep-UV LEDs stacked on a sapphire substrate was successfully separated from the substrate to fabricate vertical LEDs. In this study, an Al0.68Ga0.32N underling layer was formed on an AlN template with periodic pillars, and a process that enables reproducible substrate detachment was successfully developed. The fabricated vertical LEDs successfully exhibit remarkable luminescence characteristics (peak wavelength: 298 nm) up to a current density of ~43 kA cm^-2 at room temperature and pulse driving. Applications to high-power ultraviolet region LEDs and laser diodes are expected.

Conference Presentation

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Motoaki Iwaya, Toma Nishibayashi, Moe Shimokawa, Ryota Hasegawa, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Ryosuke Kondo, Ayumu Yabutani, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Kohei Miyoshi, Koichi Naniwae, and Akihiro Yamaguchi "Fabrication of vertical UV light-emitting devices by separation of sapphire substrates (Conference Presentation)", Proc. SPIE PC12441, Light-Emitting Devices, Materials, and Applications XXVII, PC124410A (17 March 2023); https://doi.org/10.1117/12.2646756

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KEYWORDS

Ultraviolet radiation

Sapphire

Light emitting diodes

Semiconductor lasers

Deep ultraviolet

High power lasers

Luminescence

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