Recent progress in spin defect metrology at NASA Glenn’s Quantum Sensing and Spin Physics (Q-SASP) lab

Daniel R. Hart; David J. Spry

doi:10.1117/12.3009165

13 March 2024 Recent progress in spin defect metrology at NASA Glenn’s Quantum Sensing and Spin Physics (Q-SASP) lab

Daniel R. Hart, David J. Spry

Proceedings Volume PC12911, Quantum Computing, Communication, and Simulation IV; PC1291106 (2024) https://doi.org/10.1117/12.3009165
Event: SPIE Quantum West, 2024, San Francisco, California, United States

Abstract

Component analysis of devices and technologies that will be integrated to produce space instruments is needed for future NASA missions. For quantum communications, there is a need for quantum memory, quantum repeaters, single photon emitter, and detectors. For quantum sensing, extremely low Size, Weight, and Power (SWaP) and self-calibrating electrometers, magnetometers, and thermometers are needed with nano-scale resolution. NASA Glenn's Q-SASP is developing quantum metrology capabilities in silicon carbide (SiC) to evaluate the energy structure, defect formation energy, band structure augmentation, generation/recombination rates, and limits of dipole-dipole coupling in non-metal implanted SiC devices. This work will discuss recent system developments, device developments, computational modeling, and spectroscopy results and analysis of defects created by non-metal implantations in SiC devices.

Conference Presentation

Citation Download Citation

Daniel R. Hart and David J. Spry "Recent progress in spin defect metrology at NASA Glenn’s Quantum Sensing and Spin Physics (Q-SASP) lab", Proc. SPIE PC12911, Quantum Computing, Communication, and Simulation IV, PC1291106 (13 March 2024); https://doi.org/10.1117/12.3009165

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