Effect of An Interfacial Oxide On Amorphous Si:F:H Alloy Based Metal Insulated Semiconductor (MIS) Devices

A. Madan; J. McGill; S. R. Ovshinsky; W. Czubatyj; J. Yang; M. Shur

doi:10.1117/12.970582

25 November 1980 Effect of An Interfacial Oxide On Amorphous Si:F:H Alloy Based Metal Insulated Semiconductor (MIS) Devices

A. Madan, J. McGill, S. R. Ovshinsky, W. Czubatyj, J. Yang, M. Shur

Author Affiliations +

Proceedings Volume 0248, Role of Electro-Optics in Photovoltaic Energy Conversion; (1980) https://doi.org/10.1117/12.970582
Event: 24th Annual Technical Symposium, 1980, San Diego, United States

Abstract

We discuss the effect of oxides on the forward and reverse bias J-V characteristics in a-Si:F:H MIS type devices. Data are also presented for the variation of the open circuit voltage with the work function of the Schottky contact. We conclude that the density of interface states is low.

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A. Madan, J. McGill, S. R. Ovshinsky, W. Czubatyj, J. Yang, and M. Shur "Effect of An Interfacial Oxide On Amorphous Si:F:H Alloy Based Metal Insulated Semiconductor (MIS) Devices", Proc. SPIE 0248, Role of Electro-Optics in Photovoltaic Energy Conversion, (25 November 1980); https://doi.org/10.1117/12.970582

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