Faithful Pattern Transfer: What Are The Limits In Production?

Richard L. Bersin; Barry Gelernt

doi:10.1117/12.933573

13 September 1982 Faithful Pattern Transfer: What Are The Limits In Production?

Richard L. Bersin, Barry Gelernt

Proceedings Volume 0334, Optical Microlithography I: Technology for the Mid-1980s; (1982) https://doi.org/10.1117/12.933573
Event: 1982 Microlithography Conferences, 1982, Santa Clara, United States

Abstract

As the Semiconductor industry moves toward 1 micron and submicron lithography, it is critical that anisotropic dry-etching reproduce the pattern linewidth control of the lithographic tools generating the patterns. The strength of custom processing individual wafers as opposed to batch treatments lies in creating an identical chemical and physical environment for each wafer (absence of loading effects) and in individual process monitoring and control to compensate for variations among the wafers themselves: the result is exceptional process-consistency and pattern-transfer control. This paper will discuss the correlation between real-time optical process signature monitoring and post-etch patttern-transfer analysis. Elimination of contamination via load-locked reactor design and contaminant monitoring will be discussed, as well as new methods for precision control and maintaining consistent accuracy of process parameters such as pressure, gas-flow rates, residence time and RF power.

Citation Download Citation

Richard L. Bersin and Barry Gelernt "Faithful Pattern Transfer: What Are The Limits In Production?", Proc. SPIE 0334, Optical Microlithography I: Technology for the Mid-1980s, (13 September 1982); https://doi.org/10.1117/12.933573

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