Paper
30 November 1983 Frontside-Or Backside-Illuminated HgCdTe Detectors: A New Structure For Infrared Charge-Coupled Device (IRCCD) Focal Plane Arrays
J. Ameurlaine, J. Fleury, A. Gauthier, J. Maille
Author Affiliations +
Proceedings Volume 0409, Technical Issues in Infrared Detectors and Arrays; (1983) https://doi.org/10.1117/12.935742
Event: 1983 Technical Symposium East, 1983, Arlington, United States
Abstract
The different types of state-of-the-art hybrid structures for photovoltaic focal plane arrays are subject to inherent fabrication problems. The island technology used for front-side illumination presents problems caused by the thinning and bonding of the photodetector material and by the forming of the connections. Devices for backside illumination are difficult to produce and very much dependent on the quality of the CdTe substrate. A new device which consists of a symmetrical front-and-back structure permits detection to take place on one face and electrical connection on the other. Its fabrication draws on classical HgCdTe array fabrication processes. This new symmetrical two-face structure yields diodes whose characteristics and manufacturing yields are entirely comparable to those obtained for conventional HgCdTe arrays.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Ameurlaine, J. Fleury, A. Gauthier, and J. Maille "Frontside-Or Backside-Illuminated HgCdTe Detectors: A New Structure For Infrared Charge-Coupled Device (IRCCD) Focal Plane Arrays", Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); https://doi.org/10.1117/12.935742
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KEYWORDS
Sensors

Mercury cadmium telluride

Diffusion

Silicon

Quantum efficiency

Infrared radiation

Lead

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