Optical Density And Contrast Of Positive Photoresists

S. V. Babu; V. Srinivasan

doi:10.1117/12.947812

18 April 1985 Optical Density And Contrast Of Positive Photoresists

S. V. Babu, V. Srinivasan

Proceedings Volume 0539, Advances in Resist Technology and Processing II; (1985) https://doi.org/10.1117/12.947812
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

We derive a general relation that exhibits the interdependence of the exposure and development processes in determining the contrast and the sensitivity curve of any photo-resist. We show,that for several limiting cases, the contrast is given by the reciprocal of the (pre-or post-expose) optical density of the resist, in agreement with the measured contrasts for PR102, AZ2400 and Dupont 2041 Elvacite PMMA resists. We also calculate the dependence of the threshold exposure energy D/35, and the dose Dp required to completely develop the resist, and hence, the contrast, on development time for a hypothetical solvent and simulate the results obtained using MF314 developer.

Citation Download Citation

S. V. Babu and V. Srinivasan "Optical Density And Contrast Of Positive Photoresists", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947812

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