Long-wavelength Components By Vapor Phase Epitaxy

Gregory H. Olsen

doi:10.1117/12.949594

19 November 1985 Long-wavelength Components By Vapor Phase Epitaxy

Gregory H. Olsen

Proceedings Volume 0559, Fiber Optics: Short-Haul and Long-Haul Measurements and Applications III; (1985) https://doi.org/10.1117/12.949594
Event: 29th Annual Technical Symposium, 1985, San Diego, United States

Abstract

With the advent of fiber optics and optical communications technologies, much attention has been paid to the emitter and detector components associated with these technologies(1). These semiconducting devices are small chips which have been fabricated from crystalline wafers upon which "epitaxial" layers have been deposited. (Epitaxy is the phenomenon whereby the deposited solid layer adopts the crystal structure of the substrate upon which it is deposited). The purpose of this article is to compare some of the epitaxial techniques used to "grow" or synthesize these layers and then to focus in on one of the primary techniques used to grow commercial devices: vapor phase epitaxy (VPE).

Citation Download Citation

Gregory H. Olsen "Long-wavelength Components By Vapor Phase Epitaxy", Proc. SPIE 0559, Fiber Optics: Short-Haul and Long-Haul Measurements and Applications III, (19 November 1985); https://doi.org/10.1117/12.949594

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available