An FTIR And RGA Study Of The Outgassing Of Photoresist During Ion Implant

Bhola N. Mehrotra; Lawrence A. Larson

doi:10.1117/12.961196

26 June 1986 An FTIR And RGA Study Of The Outgassing Of Photoresist During Ion Implant

Bhola N. Mehrotra, Lawrence A. Larson

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961196
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Fourier Transform Infra-Red Spectroscopy (FTIR) along with total and partial pressure measurements have been used to characterize the severe resist outgassing that occurs during high current ion implantation. This outgassing is confirmed to be mainly the evolution of hydrogen as shown by Residual Gas Analysis(RGA). Hydrogen is liberated by the breaking of C-H bonds present in the polymeric component of the resist, thus resulting in carbon layer formation. This effect is clearly observed by FTIR. Due to this mechanism, outgassing is found to be independent of the heat treatments used to cure the resists for temperatures above that necessary to evolve solvents (90C). This study concentrates on high-dose, high current conditions. The outgassing behaviorfor these cases is saturated as a function of energy, current, and dose and the results indicate near total conversion of the resist to carbon.

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Bhola N. Mehrotra and Lawrence A. Larson "An FTIR And RGA Study Of The Outgassing Of Photoresist During Ion Implant", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961196

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