Controlling Etch Profiles: The Effect Of Controlling Ion Transport

Frank C. See

doi:10.1117/12.963718

20 August 1986 Controlling Etch Profiles: The Effect Of Controlling Ion Transport

Frank C. See

Proceedings Volume 0633, Optical Microlithography V; (1986) https://doi.org/10.1117/12.963718
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

An additional degree of profile control is available when careful control over the parameter Vdc/p is exercised. This parameter may be used alone or in conjunction with photomask erosion, polymer forming chemistries, or other strategies used in varying vertical etch profiles. The effect is demonstrated by utilizing SF6 to etch oxide in an RIE plasma reactor.

Citation Download Citation

Frank C. See "Controlling Etch Profiles: The Effect Of Controlling Ion Transport", Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); https://doi.org/10.1117/12.963718

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