Modeling The Images Of Alignment Marks Under Photoresist

G. M. Gallatin; J. C. Webster; E. C. Kintner; F. Wu

doi:10.1117/12.967050

1 January 1987 Modeling The Images Of Alignment Marks Under Photoresist

G. M. Gallatin, J. C. Webster, E. C. Kintner, F. Wu

Proceedings Volume 0772, Optical Microlithography VI; (1987) https://doi.org/10.1117/12.967050
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

A method for computing the images of contoured layered media is presented. The wave equation is solved in the layers by invoking the Rayleigh hypothesis, and the solution is cast in the form of a scattering matrix which relates the Fourier components of the incoming field to those of the outgoing field. Images of layered structures produced by a given optical system can be calculated by combining the scattering matrix representing the object with matrices representing the illumination and imaging optics which include the effects of apertures and aberrations. Results from the application of this technique to the problem of imaging alignment marks under photoresist will be presented and compared with experiment.

Citation Download Citation

G. M. Gallatin, J. C. Webster, E. C. Kintner, and F. Wu "Modeling The Images Of Alignment Marks Under Photoresist", Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); https://doi.org/10.1117/12.967050

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