Status And Prospects Of Sic-Masks For Synchrotron Based X-Ray Lithography

H. Luthje; B. Matthiessen; M. Harms; A. Bruns

doi:10.1117/12.940348

30 June 1987 Status And Prospects Of Sic-Masks For Synchrotron Based X-Ray Lithography

H. Luthje, B. Matthiessen, M. Harms, A. Bruns

Proceedings Volume 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI; (1987) https://doi.org/10.1117/12.940348
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

This paper deals with the development of an X-ray stepper mask technology based on a rigid SiC.-membrane and a stress compensated W-absorber system. The SiC-mask blanks are being fabricated using batch processes like CVD-deposition and selective thin etching. As a result of extensive process optimization the polycristalline membranes can be fabricated with a smooth surface (< 40 nm) and a Young's modulus as high as the bulk value (4.6*10 11 N/m 2). Membranes of 2.7 μm in thickness are being prepared routinely with excellent transparency for synchrotron and optical radiation. For a high X-ray absorption and low thermal expansion sputter deposited tungsten has been applied. Ihe proposed stress compensating technique enables absorber stresses of less than 1*107 N/m , resulting in a mask distortion of < 100 nm. Precise sub-0.5-micron pattern with steep profiles have been generated by use of e-beam lithography and RIE techniques. High doses SOR experiments indicate an excellent long-term stability of SiC-W-masks.

Citation Download Citation

H. Luthje, B. Matthiessen, M. Harms, and A. Bruns "Status And Prospects Of Sic-Masks For Synchrotron Based X-Ray Lithography", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); https://doi.org/10.1117/12.940348

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