X-Ray Induced Damage In Boron Nitride, Silicon, And Silicon Nitride Lithography Masks

Paul King; Lawrence Pan; Piero Pianetta; Alex Shimkunas; Philip Mauger; Daniel Seligson

doi:10.1117/12.940362

30 June 1987 X-Ray Induced Damage In Boron Nitride, Silicon, And Silicon Nitride Lithography Masks

Paul King, Lawrence Pan, Piero Pianetta, Alex Shimkunas, Philip Mauger, Daniel Seligson

Proceedings Volume 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI; (1987) https://doi.org/10.1117/12.940362
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

Boron nitride membranes (produced through chemical vapor deposition of diborane and ammonia) have been exposed to synchrotron radiation and have showed severe degradation in optical properties after absorbing doses on the order of 200kJ/cm3. Damage kinetics are described as well as measurements made to identify the damage mechanism. Preliminary results on associated mechanical damage are also presented. Boron nitride membranes (produced through the pyrolysis of borazine), silicon nitride and silicon membranes exposed and tested in the same manner showed no such degradation.

Citation Download Citation

Paul King, Lawrence Pan, Piero Pianetta, Alex Shimkunas, Philip Mauger, and Daniel Seligson "X-Ray Induced Damage In Boron Nitride, Silicon, And Silicon Nitride Lithography Masks", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); https://doi.org/10.1117/12.940362

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