Picosecond Photoconductive Sampling Measurements Of The Scattering Parameters Of High Speed Field Effect Transistors

Steven C. Moss; Duane D. Smith; Donald E. Cooper

doi:10.1117/12.940977

2 February 1988 Picosecond Photoconductive Sampling Measurements Of The Scattering Parameters Of High Speed Field Effect Transistors

Steven C. Moss, Duane D. Smith, Donald E. Cooper

Author Affiliations +

Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940977
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

We describe stimulus-response measurement techniques based on the photoconductive generation and sampling of picosecond electrical pulses for measuring the high frequency scattering parameters of high speed microwave devices. We compare these techniques with more conventional microwave diagnostic techniques.

Citation Download Citation

Steven C. Moss, Duane D. Smith, and Donald E. Cooper "Picosecond Photoconductive Sampling Measurements Of The Scattering Parameters Of High Speed Field Effect Transistors", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); https://doi.org/10.1117/12.940977

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