Paper
22 September 1987 GaAs-AlGaAs Multiple Quantum Well Structures And High-Power Lasers Grown By Metalorganic Vapor Phase Epitaxy (Movpe) In A Chimney Reactor.
Fred Roozeboom, Andre Sikkema, Laurens W. Molenkamp
Author Affiliations +
Proceedings Volume 0800, Novel Optoelectronic Devices; (1987) https://doi.org/10.1117/12.941181
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
Abstract
GaAs/AlGaAs GRIN-SCH type multiple quantum well lasers with 4 wells of 11 nm GaAs, grown in an MOVPE chimney reactor, exhibit an output power as high as 110 mW/facet (CW, 30°C; 5 μm stripe) and 1.3 W/facet (pulsed, 30°C; 53 μm stripe) until catastrophic optical damage occurs. 2000 hours life tests conducted at 60°C and 15 mW CW show no noticeable degradation for the 5 μm stripe laser with a reflective coating on both facets. Raman spectroscopy on similar multiple quantum well structures with 65 GaAs wells is used to ascertain that the wells have minimum residual aluminum-content.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fred Roozeboom, Andre Sikkema, and Laurens W. Molenkamp "GaAs-AlGaAs Multiple Quantum Well Structures And High-Power Lasers Grown By Metalorganic Vapor Phase Epitaxy (Movpe) In A Chimney Reactor.", Proc. SPIE 0800, Novel Optoelectronic Devices, (22 September 1987); https://doi.org/10.1117/12.941181
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KEYWORDS
Gallium arsenide

Raman spectroscopy

Continuous wave operation

Quantum wells

Coating

Pulsed laser operation

Optoelectronic devices

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