Paper
12 April 1988 Surface Emitting Lasers For Optical Circuitry - Optical Interconnect Technology
P.K. L Yu, E Bradley, R F Mathis
Author Affiliations +
Proceedings Volume 0886, Optoelectronic Signal Processing for Phased-Array Antennas; (1988) https://doi.org/10.1117/12.944175
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
Surface emitting (SE) lasers and their application in VLSI optical interconnect networks are considered. In particular, the advantages provided by SE lasers in optical interconnect circuits and monolithic integration are discussed. Some of the requirements, such as wavelength stability, power dissipation, emission angle, size, etc. are compared with respect to conventional laser diodes. It is noted that the operation of SE lasers will be critically dependent on the properties of the feedback reflectors. Experimental measurements of reflection spectra on AIGaAs/GaAs multilayer reflectors and InAlAs/InGaAs etalons formed with molecular beam epitaxy (MBE) are presented.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P.K. L Yu, E Bradley, and R F Mathis "Surface Emitting Lasers For Optical Circuitry - Optical Interconnect Technology", Proc. SPIE 0886, Optoelectronic Signal Processing for Phased-Array Antennas, (12 April 1988); https://doi.org/10.1117/12.944175
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KEYWORDS
Optical interconnects

Reflectors

Reflectivity

Laser optics

Gallium arsenide

Laser applications

Mirrors

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