High Detectivity D* = 1.0 X 10 10 cm/Hz/W GaAs/AlGaAs Multiquantum Well X = 8.3 Âµm Infrared Detector

B F Levine; C G Bethea; G Hasnain; J Walker; R J Malik

doi:10.1117/12.946632

15 August 1988 High Detectivity D* = 1.0 X 10 ¹⁰ cm√Hz/W GaAs/AlGaAs Multiquantum Well λ = 8.3 µm Infrared Detector

B F Levine, C G Bethea, G Hasnain, J Walker, R J Malik

Proceedings Volume 0930, Infrared Detectors and Arrays; (1988) https://doi.org/10.1117/12.946632
Event: 1988 Technical Symposium on Optics, Electro-Optics, and Sensors, 1988, Orlando, FL, United States

Abstract

We report the first high detectivity, (D* = 1.0 X 1010 cm √Hz/W), high responsivity (Rv = 30,000 V/W), GaAs/A1),Gai_xAs multiquantum well detector, sensitive in the long wavelength infrared band (LWIR) at λ = 8.3 μm (operating at a temperature of T = 77K). Due to the mature GaAs growth and processing technologies as well as the potential for monolithic integration with high speed GaAs FETs, large focal plane arrays of these detectors should be possible.

Citation Download Citation

B F Levine, C G Bethea, G Hasnain, J Walker, and R J Malik "High Detectivity D* = 1.0 X 10 ¹⁰ cm√Hz/W GaAs/AlGaAs Multiquantum Well λ = 8.3 µm Infrared Detector", Proc. SPIE 0930, Infrared Detectors and Arrays, (15 August 1988); https://doi.org/10.1117/12.946632

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