Growth of tapered GaN nanorod and the study of its growth mechanism (Conference Presentation)

Xu Zhang; Charng-Gan Tu; Yu-Feng Yao; Chen-Yao Chao; Sheng-Hung Chen; Chun-Han Lin; Chia-Ying Su; Yean-Woei Kiang; Chih-Chung Yang

doi:10.1117/12.2249542

19 April 2017 Growth of tapered GaN nanorod and the study of its growth mechanism (Conference Presentation)

Xu Zhang, Charng-Gan Tu, Yu-Feng Yao, Chen-Yao Chao, Sheng-Hung Chen, Chun-Han Lin, Chia-Ying Su, Yean-Woei Kiang, Chih-Chung Yang

Author Affiliations +

Proceedings Volume 10104, Gallium Nitride Materials and Devices XII; 1010412 (2017) https://doi.org/10.1117/12.2249542
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

In a core-shell quantum-well (QW) nanorod (NR) structure, because of the non-uniform constituent atom supply for QW growth at different heights on a sidewall, the QW thickness and indium content vary with NR height. Multi-section NRs can be grown by controlling the supply duration of Ga source for decreasing the size of catalytic Ga droplet and hence tapering the NR cross-sectional size. The sidewall QWs of such a multi-section NR can emit light of a broad spectrum due to the larger variation ranges of QW thickness and indium content between sections of different cross-sectional sizes. In this paper, besides the growth processes of the aforementioned NR structures are reported, two models are built for simulating the sidewall QW growth and the tapering process of NR. Based on one of the models, the theories show the consistent results of increasing QW thickness and indium content in increasing NR height with the experimental observations. Based on another model, Ga adatoms diffuse on the slant facets from the Ga droplet on the NR top to deposit GaN on the slant facets for forming a gradient layer. In this situation, the angle of the slant facet increases from ~43 to ~62 degrees during the tapering process. The results are consistent with what observed in experiment. In this paper, besides NRs grown from patterned circular holes, the growth results of NRs from patterned elliptical holes are illustrated.

Conference Presentation

Citation Download Citation

Xu Zhang, Charng-Gan Tu, Yu-Feng Yao, Chen-Yao Chao, Sheng-Hung Chen, Chun-Han Lin, Chia-Ying Su, Yean-Woei Kiang, and Chih-Chung Yang "Growth of tapered GaN nanorod and the study of its growth mechanism (Conference Presentation)", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 1010412 (19 April 2017); https://doi.org/10.1117/12.2249542

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Quantum wells

Gallium

Gallium nitride

Indium

Nanorods

Chemical species

Chaos

Show All Keywords

Keywords/Phrases

Search In:

Publication Years