Modeling of optical and electrical confinements in nitride VCSELs

P. Śpiewak; M. Wasiak; A. K. Sokół; R. P. Sarzała

doi:10.1117/12.2253624

16 February 2017 Modeling of optical and electrical confinements in nitride VCSELs

P. Śpiewak, M. Wasiak, A. K. Sokół, R. P. Sarzała

Proceedings Volume 10104, Gallium Nitride Materials and Devices XII; 101041J (2017) https://doi.org/10.1117/12.2253624
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

In this paper, we present numerical simulations of different types of nitride VCSELs. We analyzed structures with different DBR mirrors and electrical confinements. We compare threshold parameters, including threshold current, threshold temperature and optical field distribution for structures with an ITO contact and structures with tunnel junctions. Lasers emitting blue/violet and green radiation are analyzed from the point of view of their thermal properties.

Citation Download Citation

P. Śpiewak, M. Wasiak, A. K. Sokół, and R. P. Sarzała "Modeling of optical and electrical confinements in nitride VCSELs", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041J (16 February 2017); https://doi.org/10.1117/12.2253624

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