Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

Chao Shen; Tien Khee Ng; Changmin Lee; John T. Leonard; Shuji Nakamura; James S. Speck; Steven P. Denbaars; Ahmed Y. Alyamani; Munir M. El-Desouki; Boon S. Ooi

doi:10.1117/12.2251144

16 February 2017 Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

Chao Shen, Tien Khee Ng, Changmin Lee, John T. Leonard, Shuji Nakamura, James S. Speck, Steven P. Denbaars, Ahmed Y. Alyamani, Munir M. El-Desouki, Boon S. Ooi

Author Affiliations +

Proceedings Volume 10104, Gallium Nitride Materials and Devices XII; 101041U (2017) https://doi.org/10.1117/12.2251144
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the “efficiency droop” effect and the high-speed performance is limited by a relatively small -3 dB modulation bandwidth (<100 MHz). InGaN-based LDs were recently studied as a droop-free, high-speed emitter; yet it is associated with speckle-noise and safety concerns. In this paper, we presented the semipolar InGaN-based violet-blue emitting superluminescent diodes (SLDs) as a high-brightness and high-speed light source, combining the advantages of LEDs and LDs. Utilizing the integrated passive absorber configuration, an InGaN/GaN quantum well (QW) based SLD was fabricated on semipolar GaN substrate. Using SLD to excite a YAG:Ce phosphor, white light can be generated, exhibiting a color rendering index of 68.9 and a color temperature of 4340 K. Besides, the opto-electrical properties of the SLD, the emission pattern of the phosphor-converted white light, and the high-speed (Gb/s) visible light communication link using SLD as the transmitter have been presented and discussed in this paper.

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Chao Shen, Tien Khee Ng, Changmin Lee, John T. Leonard, Shuji Nakamura, James S. Speck, Steven P. Denbaars, Ahmed Y. Alyamani, Munir M. El-Desouki, and Boon S. Ooi "Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041U (16 February 2017); https://doi.org/10.1117/12.2251144

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