Simulation of multiplying electron distribution in electron multiplier layer for EBAPS

Xue Piao; Feng Shi; Jin Song; Ye Li; Qingduo Duanmu; Chunyang Liu; De Song

doi:10.1117/12.2249736

7 November 2016 Simulation of multiplying electron distribution in electron multiplier layer for EBAPS

Xue Piao, Feng Shi, Jin Song, Ye Li, Qingduo Duanmu, Chunyang Liu, De Song

Proceedings Volume 10141, Selected Papers of the Chinese Society for Optical Engineering Conferences held July 2016; 101410W (2016) https://doi.org/10.1117/12.2249736
Event: Selected Proceedings of the Chinese Society for Optical Engineering Conferences held July 2016, 2016, Changchun, China

Abstract

The multiplying electron distribution within the electron multiplier layer for electron bombarded active pixel sensor (EBAPS) was simulated. The photoelectron scatting trajectories in electron multiplier layer were simulated based on the low-energy electron-solid interaction model and Monte Carlo method. According to semiconductor theory, the influence factors (the incident electron energy, depth and beam diameter) how affecting the energy loss rate were studied. Therefore, the photoelectron scatting trajectories and multiplying electron distribution in electron multiplier layer can be simulated, which will provide theoretical basis to further simulate the charge collection efficiency of EBAPS.

Citation Download Citation

Xue Piao, Feng Shi, Jin Song, Ye Li, Qingduo Duanmu, Chunyang Liu, and De Song "Simulation of multiplying electron distribution in electron multiplier layer for EBAPS", Proc. SPIE 10141, Selected Papers of the Chinese Society for Optical Engineering Conferences held July 2016, 101410W (7 November 2016); https://doi.org/10.1117/12.2249736

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