Directed self-assembly patterning strategies for phase change memory applications

Robert L. Bruce; Gloria Fraczak; John M. Papalia; HsinYu Tsai; Matt BrightSky; Hiroyuki Miyazoe; Yu Zhu; Sebastian U. Engelmann; Hsiang-Lan Lung; Takeshi Masuda; Koukou Suu; Chi-Chun Liu; Hao Tang; John C. Arnold; Nelson Felix; Chung H. Lam

doi:10.1117/12.2257829

21 March 2017 Directed self-assembly patterning strategies for phase change memory applications

Robert L. Bruce, Gloria Fraczak, John M. Papalia, HsinYu Tsai, Matt BrightSky, Hiroyuki Miyazoe, Yu Zhu, Sebastian U. Engelmann, Hsiang-Lan Lung, Takeshi Masuda, Koukou Suu, Chi-Chun Liu, Hao Tang, John C. Arnold, Nelson Felix, Chung H. Lam

Author Affiliations +

Proceedings Volume 10149, Advanced Etch Technology for Nanopatterning VI; 101490J (2017) https://doi.org/10.1117/12.2257829
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

Phase change material (PCM)-based memory cells have shown promise as an enabler for low power, high density memory. There is a current need to develop and improve patterning strategies to attain smaller device dimensions. In this work, two methods of patterning of PCM device structures was achieved using directed self-assembly (DSA) patterning: the formation of a high aspect ratio pore designed for atomic layer deposition (ALD) of etch damage-free PCM, and pillar formation by image reversal and plasma etch transfer into a PCM film. We show significant CD reduction (180 nm to 20 nm) of a lithographically defined hole by plasma etch shrink, DSA spin-coat and subsequent high selectivity pattern transfer. We then demonstrate structural fabrication of both DSA-defined SiN pores with ALD PCM and DSA-defined PCM pillars. Challenges to both pore and pillar fabrication are discussed.

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Robert L. Bruce, Gloria Fraczak, John M. Papalia, HsinYu Tsai, Matt BrightSky, Hiroyuki Miyazoe, Yu Zhu, Sebastian U. Engelmann, Hsiang-Lan Lung, Takeshi Masuda, Koukou Suu, Chi-Chun Liu, Hao Tang, John C. Arnold, Nelson Felix, and Chung H. Lam "Directed self-assembly patterning strategies for phase change memory applications", Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490J (21 March 2017); https://doi.org/10.1117/12.2257829

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