Front Matter: Volume 10303

doi:10.1117/12.2285212

28 August 2002 Front Matter: Volume 10303

Proceedings Volume 10303, Gallium-Nitride-based Technologies: A Critical Review; 1030301 (2002) https://doi.org/10.1117/12.2285212
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

This PDF file contains the front matter associated with SPIE Proceedings Volume 10303, including the Title Page, Copyright information, Table of Contents, and Conference Committee listing.

Conference Committee

Conference Chair

Marek Osiński, CHTM/University of New Mexico (USA)

Session Chairs

Epitaxial Growth Techniques for Wide-Bandgap Nitrides
James S. Speck, University of California/Santa Barbara (USA)
Extended Defects and Degradation Mechanisms
Theodore D. Moustakas, Boston University (USA)
Substrates for Growth of Low-Defect-Density Wide-Badgap Group-III Nitrides
Shiro Sakai, University of Tokushima (Japan)
Advanced Processing and LEDs
Takashi Mukai, Nichia Corporation (Japan)
Wide-Bandgap Lasers
Piotr Perlin, High Pressure Research Center UNIPRESS (Poland)
Dilute Nitrides
John F. Klem, Sandia National Laboratories (USA)
Nitride VCSELs and Photodetectors
Pierre Gibart, Centre de Recherches sur l’Hétéroépitaxie et ses Applications/CNRS (France)

Citation Download Citation

"Front Matter: Volume 10303", Proc. SPIE 10303, Gallium-Nitride-based Technologies: A Critical Review, 1030301 (28 August 2002); https://doi.org/10.1117/12.2285212

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