Numerical Simulation Of The Diocotron Instability In Planar Diode Geometry

H. C. Chen; H. S. Uhm

doi:10.1117/12.978329

18 November 1989 Numerical Simulation Of The Diocotron Instability In Planar Diode Geometry

H. C. Chen, H. S. Uhm

Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978329
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States

Abstract

The diocotron instability for sheared, relativistic electron flow in a planar diode geometry with major fields Ex(x), Bz(x), and Vv(x) has been studied numerically by using a two-dithensional electromagnetic relativistic particle-in-cell code. The growth rate and real oscillation frequency are obtained and compared to the analytical results for a tenuous electron flow.

Citation Download Citation

H. C. Chen and H. S. Uhm "Numerical Simulation Of The Diocotron Instability In Planar Diode Geometry", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); https://doi.org/10.1117/12.978329

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