AlGaAs-based optically pumped semiconductor lasers

Yanbo Bai; Zuntu Xu; Yong Lin; Jeffrey Wisdom; Christian Scholz; Eli Weiss; Juan Chilla; Andreas Diening

doi:10.1117/12.2291082

15 February 2018 AlGaAs-based optically pumped semiconductor lasers

Yanbo Bai, Zuntu Xu, Yong Lin, Jeffrey Wisdom, Christian Scholz, Eli Weiss, Juan Chilla, Andreas Diening

Proceedings Volume 10515, Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII; 105150E (2018) https://doi.org/10.1117/12.2291082
Event: SPIE LASE, 2018, San Francisco, California, United States

Abstract

The most technologically mature optically pumped semiconductor lasers (OPSL) are based on InGaAs quantum wells (QW) for emission in the 900-1200 nm range. The low wavelength boundary is set by both the bandgap of InGaAs and the most common pump wavelength of 808 nm. To extend the wavelength coverage into 700 – 900 nm, a different QW system and a different pump wavelength are needed. In this work, we present the progress and result in the development of AlGaAs-based OPSL.

Citation Download Citation

Yanbo Bai, Zuntu Xu, Yong Lin, Jeffrey Wisdom, Christian Scholz, Eli Weiss, Juan Chilla, and Andreas Diening "AlGaAs-based optically pumped semiconductor lasers", Proc. SPIE 10515, Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII, 105150E (15 February 2018); https://doi.org/10.1117/12.2291082

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