A comparative study of EUV absorber materials using lensless actinic imaging of EUV photomasks

S. Fernandez; D. Kazazis; R. Rajeev; I. Mochi; P. Helfenstein; S. Yoshitake; Y. Ekinci

doi:10.1117/12.2297381

20 March 2018 A comparative study of EUV absorber materials using lensless actinic imaging of EUV photomasks

S. Fernandez, D. Kazazis, R. Rajeev, I. Mochi, P. Helfenstein, S. Yoshitake, Y. Ekinci

Proceedings Volume 10583, Extreme Ultraviolet (EUV) Lithography IX; 105831H (2018) https://doi.org/10.1117/12.2297381
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

For EUV photomasks, high-k absorber materials represent a potential strategy to effectively mitigate mask 3D effects which are getting more prominent as the scanners’ NA increases. The performance of RESCAN, our actinic lensless imaging microscope is evaluated through three different absorber materials (HSQ, TaBN, and Ni) together with the imaging properties of the materials themselves. Defect maps for each material are analyzed and compared.

Citation Download Citation

S. Fernandez, D. Kazazis, R. Rajeev, I. Mochi, P. Helfenstein, S. Yoshitake, and Y. Ekinci "A comparative study of EUV absorber materials using lensless actinic imaging of EUV photomasks", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105831H (20 March 2018); https://doi.org/10.1117/12.2297381

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