Defect and roughness reduction of chemo-epitaxy DSA pattern

Makoto Muramatsu; Takanori Nishi; Gen You; Yasuyuki Ido; Takahiro Kitano

doi:10.1117/12.2297185

19 March 2018 Defect and roughness reduction of chemo-epitaxy DSA pattern

Makoto Muramatsu, Takanori Nishi, Gen You, Yasuyuki Ido, Takahiro Kitano

Proceedings Volume 10584, Novel Patterning Technologies 2018; 105840M (2018) https://doi.org/10.1117/12.2297185
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

Directed self-assembly (DSA) is one of the candidates for next generation lithography. Over the past years, many papers and presentation have been reported regarding DSA, and Tokyo Electron Limited (TEL is a registered trademark or a trademark of Tokyo Electron Limited in Japan and /or other countries.) also has presented the evaluation results and the advantages of each^1-6. Especially, the chemo-epitaxy process has advantages for the sub 20nm line & space patterns to apply to DRAM active area, Logic fin and narrow metal patterns. One of the biggest advantages of DSA lines is that the pattern pitch is decided by the specific factors of the block copolymer, and it achieves the small pitch walking as a consequence. On the other hand, the chemo-epitaxy process can be applied to the hexagonal close-packed arrangement holes⁶. Those holes are expected to be the patterns for DRAM storage.

In this report, we present the latest results regarding the defect reduction and LER improvement work regarding chemoepitaxy line & space pattern. In addition, we update the evaluation results regarding chemo-epitaxy hole pattern.

Conference Presentation

Citation Download Citation

Makoto Muramatsu, Takanori Nishi, Gen You, Yasuyuki Ido, and Takahiro Kitano "Defect and roughness reduction of chemo-epitaxy DSA pattern", Proc. SPIE 10584, Novel Patterning Technologies 2018, 105840M (19 March 2018); https://doi.org/10.1117/12.2297185

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