Advanced CD-SEM imaging methodology for EPE measurements

Yoshikata Takemasa; Takeyoshi Ohashi; Hiroyuki Shindo; Gian Lorusso; Anne-Laure Charley

doi:10.1117/12.2298393

28 March 2018 Advanced CD-SEM imaging methodology for EPE measurements

Yoshikata Takemasa, Takeyoshi Ohashi, Hiroyuki Shindo, Gian Lorusso, Anne-Laure Charley

Proceedings Volume 10585, Metrology, Inspection, and Process Control for Microlithography XXXII; 1058522 (2018) https://doi.org/10.1117/12.2298393
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

Accurate EPE (edge placement error) characterization is important for the process control of high-volume manufacturing at N5 BEOL and beyond. In a CD-SEM metrology, the accurate edge-to-edge measurements among multiple layers and/or SEM-Contour extraction are required for the accurate EPE characterization. One of the technical challenges in CD-SEM metrology is to control charging effects caused by EB-irradiation during SEM image acquisition. In this paper, the effects of new charge control methods (Special Scan and Faster Scan), which are implemented in the latest Hitachi CD-SEM (CG6300), were examined with EUV resist hole-patterns. It was confirmed that Special Scan showed a profound effect on the suppression of the charge-induced errors. We also demonstrated the effects of the Special Scan for CD measurements and Contour Extraction for the EPE characterization of block on SAQP (SAQP lines + EUV block) pattern at imec iN7platform. Consequently, Special Scan is expected to be the solution for the accurate EPE measurements by CD-SEM.

Citation Download Citation

Yoshikata Takemasa, Takeyoshi Ohashi, Hiroyuki Shindo, Gian Lorusso, and Anne-Laure Charley "Advanced CD-SEM imaging methodology for EPE measurements", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 1058522 (28 March 2018); https://doi.org/10.1117/12.2298393

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