Paper
20 March 2018 Enhancement of ArF immersion scanner system for advanced device node manufacturing
Yujiro Hikida, Akira Hayakawa, Yoshihiro Teshima, Tomonori Dosho, Noriaki Kasai, Yasushi Yoda, Kazuo Masaki, Yuichi Shibazaki
Author Affiliations +
Abstract
In order to meet the industry’s increasingly demanding requirements, especially in the area of improving pattern edge placement error for multiple patterning processes, we have developed the leading edge NSR-S635E ArF immersion scanner. The NSR-S635E delivers marked enhancements in scanner performance compared to the previous generation system, and provides expanded alignment capacity with a groundbreaking system called the inline Alignment Station (iAS) [1]. In this paper, we introduce the details of the NSR-S635E, including iAS, and demonstrate their capabilities for solving production challenges now and in the future.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yujiro Hikida, Akira Hayakawa, Yoshihiro Teshima, Tomonori Dosho, Noriaki Kasai, Yasushi Yoda, Kazuo Masaki, and Yuichi Shibazaki "Enhancement of ArF immersion scanner system for advanced device node manufacturing", Proc. SPIE 10587, Optical Microlithography XXXI, 105870X (20 March 2018); https://doi.org/10.1117/12.2297302
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconducting wafers

Scanners

Optical alignment

Control systems

Overlay metrology

Lithography

Manufacturing

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