Ultrahigh efficiency III-V on Si MOS capacitor optical modulator

T. Hiraki; T. Aihara; K. Hasebe; T. Fujii; K. Takeda; T. Tsuchizawa; T. Kakitsuka; H. Fukuda; S. Matsuo

doi:10.1117/12.2312315

21 May 2018 Ultrahigh efficiency III-V on Si MOS capacitor optical modulator

T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, T. Kakitsuka, H. Fukuda, S. Matsuo

Proceedings Volume 10686, Silicon Photonics: From Fundamental Research to Manufacturing; 106860K (2018) https://doi.org/10.1117/12.2312315
Event: SPIE Photonics Europe, 2018, Strasbourg, France

Abstract

A high-efficiency and low-loss Mach-Zehnder modulator on a Si platform is a key component for meeting the demand for high-capacity, low-cost and low-power optical transceivers in future optical fiber links. We report a III-V/Si MOS capacitor Mach-Zehnder modulator with an ultrahigh-efficiency phase shifter, which consists of n-type InGaAsP and ptype Si. The main advantage of this structure is a large electron-induced refractive index change and low free-carrier absorption loss of the n-type InGaAsP. The heterogeneously integrated InGaAsP/Si MOS capacitor structure is fabricated by using the oxygen plasma assisted bonding method. The fabricated device shows V_πL of 0.09 Vcm, a value over three-times smaller than that of the conventional Si MOS capacitor Mach-Zehnder modulator, without an increase in the insertion loss. This clearly indicates that the proposed III-V/Si MOS capacitor Mach-Zehnder modulator overcomes the performance limit of the Si Mach-Zehnder modulator.

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T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, T. Kakitsuka, H. Fukuda, and S. Matsuo "Ultrahigh efficiency III-V on Si MOS capacitor optical modulator", Proc. SPIE 10686, Silicon Photonics: From Fundamental Research to Manufacturing, 106860K (21 May 2018); https://doi.org/10.1117/12.2312315

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