Paper
8 February 2019 A novel design of a-Si based memristor with optical readout functionality utilizing silicon prism
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Proceedings Volume 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging; 108430U (2019) https://doi.org/10.1117/12.2506347
Event: Ninth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT2018), 2018, Chengdu, China
Abstract
The Switching mechanism of a-Si memristor is based on the electrochemical metallization (ECM) effect. After application of a constant bias, the metal ions oxidized on the surface of the electrode migrates to the amorphous silicon layer, which not only lead to the resistive switching behavior, but also the change of optical parameters of switching material. Here, a novel film memristor with optical readout functionality has been set up by combining a silicon prism with Ag/a-Si/Al structure. The attenuation of the reflected light from the device dependence on surface plasmon resonance (SPR) effect on interface of silver layer which is sensitive to the refractive index of the a-Si layer. The change of the reflectance spectrum of the memristor under different bias voltages was simulate by means of finite-difference time-domain (FDTD) method, and the influence of the thickness of the amorphous silicon film and the silver film on the intensity of the reflected light was analyzed.
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Xiang Dong, Xiangdong Jiang, Wei Li, RuiKang Guo, and Jimin Wang "A novel design of a-Si based memristor with optical readout functionality utilizing silicon prism", Proc. SPIE 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging, 108430U (8 February 2019); https://doi.org/10.1117/12.2506347
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KEYWORDS
Amorphous silicon

Silver

Prisms

Refractive index

Silicon

Metals

Surface plasmons

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