Paper
12 December 2018 Study on preparation and sensitive properties of Ag-doped ZnO thin films
Huiqun Zhu, Chunbo Li, Lekang Li, Hui Li
Author Affiliations +
Proceedings Volume 10846, Optical Sensing and Imaging Technologies and Applications; 108462K (2018) https://doi.org/10.1117/12.2505519
Event: International Symposium on Optoelectronic Technology and Application 2018, 2018, Beijing, China
Abstract
Zinc oxide thin films with Ag dopant (ZnO:Ag) were prepared on n-type silicon and quartz substrates by co-sputtering and post annealing. The ZnO:Ag thin films were measured by means of ultraviolet-visible spectrophotometer, fluorescence spectrophotometer, Hall Effect and I-V experiment. Optical measurement results show that the average transmittance of ZnO:Ag thin films in the wavelength range of 200~850 nm decrease with the increase of Ag content. The Hall effect measurement results show that the corresponding hole concentration of the ZnO:Ag film is 1.29×1021 cm-3 . This reveals that the ZnO:Ag film is really p-type behavior. The sensitivity of p-ZnO:Ag/n-Si heterojunction structure is 0.1985. The devices based on p-type ZnO:Ag thin films have a good ultraviolet light (360 nm) sensitive properties.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huiqun Zhu, Chunbo Li, Lekang Li, and Hui Li "Study on preparation and sensitive properties of Ag-doped ZnO thin films", Proc. SPIE 10846, Optical Sensing and Imaging Technologies and Applications, 108462K (12 December 2018); https://doi.org/10.1117/12.2505519
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KEYWORDS
Silver

Thin films

Zinc oxide

Annealing

Ultraviolet radiation

Sputter deposition

Zinc

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