Focused-Ion-Beam Induced Deposition Of Metal For Microcircuit Modification

D. K. Stewart; L. A. Stern; J. C. Morgan

doi:10.1117/12.968510

1 August 1989 Focused-Ion-Beam Induced Deposition Of Metal For Microcircuit Modification

D. K. Stewart, L. A. Stern, J. C. Morgan

Proceedings Volume 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII; (1989) https://doi.org/10.1117/12.968510
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

Focused-ion-beam (FIB) machines can now modify integrated circuits by milling disconnects as well as depositing conductive connections on both inter- and intra-level structures with a range of beam sizes. Although FIB sputtering is well developed for photomask and IC repair, FIB deposition of metal has only recently been used to repair actual devices. We have developed a process to deposit films with resistivities of 150 - 220 uohm-cm and at rates of 1 - 2 [angstroms-um²]/[pA-s]. This paper includes a description of FIB induced deposition of tungsten as well as applications which demonstrate the ability of the system to restructure microcircuits for repair and failure analysis.

Citation Download Citation

D. K. Stewart, L. A. Stern, and J. C. Morgan "Focused-Ion-Beam Induced Deposition Of Metal For Microcircuit Modification", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); https://doi.org/10.1117/12.968510

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