Presentation + Paper
1 March 2019 Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates
Author Affiliations +
Abstract
A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer and one containing an AlGaN back-barrier, and the threshold voltage, drain current density, and buffer leakage current are compared. With the epitaxial structure containing a high resistive GaN layer, normally-off operation with a threshold voltage of +0.5 V is achieved. The threshold voltage is further increased to +2 V with the AlGaN back-barrier, and the buffer leakage current was improved by over an order of magnitude.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Melisa Ekin Gulseren, Berkay Bozok, Gokhan Kurt, Omer Ahmet Kayal, Mustafa Ozturk, Sertac Ural, Bayram Butun, and Ekmel Ozbay "Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates", Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181A (1 March 2019); https://doi.org/10.1117/12.2507398
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KEYWORDS
Field effect transistors

Gallium nitride

Aluminum

Etching

Silicon

Measurement devices

Transistors

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