Litho-performance expansion with new SOC made from Hemicellulose

Masahiko Harumoto; Yuji Tanaka; Chisayo Nakayama; You Arisawa; Masaya Asai; Charles Pieczulewski; Harold Stokes; Kimiko Yamamoto; Hiroki Tanaka; Yasuaki Tanaka; Kazuyo Morita

doi:10.1117/12.2517692

4 June 2019 Litho-performance expansion with new SOC made from Hemicellulose

Masahiko Harumoto, Yuji Tanaka, Chisayo Nakayama, You Arisawa, Masaya Asai, Charles Pieczulewski, Harold Stokes, Kimiko Yamamoto, Hiroki Tanaka, Yasuaki Tanaka, Kazuyo Morita

Author Affiliations +

Proceedings Volume 10957, Extreme Ultraviolet (EUV) Lithography X; 109571V (2019) https://doi.org/10.1117/12.2517692
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

Tri-layer processes, which typically consist of photoresist, Si containing anti-reflective coating (Si-ARC) and spin on carbon (SOC), have been widely used since ArF immersion lithography. Continually reduced pattern dimensions need thinner photoresist films due to the common phenomenon of post-develop line collapse with higher aspect ratios. Consequently, it has been necessary to enhance pattern transfer performance after etching with such tri-layer processes. Successfully implementing tri-layer processes requires consideration of issues such as increased process steps, cost, and other inherent limitations of pattern transfer enhancement with a more complicated stack. In this work, we present a hemicellulose SOC material with the outstanding advantage of Si etch selectivity greater than 15. Hemicellulose SOC could significantly reduce pattern transfer limitations for etching, therefore the benefits of processing higher aspect ratio structures can be more easily achieved. Herein, we investigate the hemicellulose SOC lithography performance using resolution, sensitivity, and line width roughness as metrics. Also, we demonstrate these lithography performances through the etching. During the conference, we will discuss the potential issues of next generation processes using ArF immersion and EUV lithography.

Citation Download Citation

Masahiko Harumoto, Yuji Tanaka, Chisayo Nakayama, You Arisawa, Masaya Asai, Charles Pieczulewski, Harold Stokes, Kimiko Yamamoto, Hiroki Tanaka, Yasuaki Tanaka, and Kazuyo Morita "Litho-performance expansion with new SOC made from Hemicellulose", Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109571V (4 June 2019); https://doi.org/10.1117/12.2517692

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
5 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

System on a chip

Silicon

Etching

Extreme ultraviolet

Photoresist materials

Extreme ultraviolet lithography

Line width roughness

Show All Keywords

Keywords/Phrases

Search In:

Publication Years