Paper
20 March 2019 Sample patterns extraction from layout automatically based on hierarchical cluster algorithm for lithography process optimization
Tianyang Gai, Ying Chen, Pengzheng Gao, Xiaojing Su, Lisong Dong, Yajuan Su, Yayi Wei, Tianchun Ye
Author Affiliations +
Abstract
The effective test pattern is a crucial component for lithography process optimization such as Source Mask Optimization (SMO) and Optical Proximity Correction (OPC). The conventional parameterized test patterns cannot represent various contexts of patterns, thus sample patterns extracted from layout become an alternative option. This paper introduces a sample patterns extraction method based on the hierarchical clustering algorithm, according to the geometric characteristics. Meanwhile, an improved HLAC-based method is applied to the layout patterns at the stage of feature extraction for accurate characterization. The method can reduce the number of test patterns while maintaining high coverage of layout’s geometric features. The lithography process window is analyzed to validate the effectiveness of the patterns clustering flow. Moreover, the comparison between the spectrums of sample patterns and original layout also indicates that the proposed sampling method preserve a sufficient coverage of layout’s optical characteristics. Pattern extraction method in this paper could provide a candidate solution for fast test pattern generation with high coverage for lithography process exploration.
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Tianyang Gai, Ying Chen, Pengzheng Gao, Xiaojing Su, Lisong Dong, Yajuan Su, Yayi Wei, and Tianchun Ye "Sample patterns extraction from layout automatically based on hierarchical cluster algorithm for lithography process optimization", Proc. SPIE 10962, Design-Process-Technology Co-optimization for Manufacturability XIII, 109620X (20 March 2019); https://doi.org/10.1117/12.2514177
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KEYWORDS
Feature extraction

Lithography

Optimization (mathematics)

Photomasks

Optical proximity correction

Source mask optimization

Machine learning

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