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12 July 2019 Ga-free InAs/InAsSb type-II superlattice (T2SL) photodetector for high operating temperature in the midwave infrared spectral domain
J. -P. Perez, Q. Durlin, P. Christol
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Proceedings Volume 11180, International Conference on Space Optics — ICSO 2018; 111806E (2019) https://doi.org/10.1117/12.2536149
Event: International Conference on Space Optics - ICSO 2018, 2018, Chania, Greece
Abstract
We studied Ga-free InAs/InAsSb type-II superlattice (T2SL) in terms of period, thickness and antimony composition as a photon absorbing active layer (AL) of a suitable XBn structure for full mid-wavelength infrared domain (MWIR, 3- 5μm) detection. The SL photodetector structures were fabricated by molecular beam epitaxy (MBE) on n-type GaSb substrate and exhibited cut-off wavelength between 5μm and 5.5μm at 150K. Electro-optical and electrical results of the device are reported and compared to the usual InSb MWIR photodiode.
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J. -P. Perez, Q. Durlin, and P. Christol "Ga-free InAs/InAsSb type-II superlattice (T2SL) photodetector for high operating temperature in the midwave infrared spectral domain", Proc. SPIE 11180, International Conference on Space Optics — ICSO 2018, 111806E (12 July 2019); https://doi.org/10.1117/12.2536149
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KEYWORDS
Mid-IR
Gallium antimonide
Antimony
Photodetectors
Sensors
Superlattices
Indium arsenide
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